IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

An image sensor according to the technical idea of the present invention includes: a semiconductor layer comprising a first plane and a second plane opposite to the first plane; a plurality of light sensing devices which are formed in the semiconductor layer; a pixel isolation layer which is located between adjacent light sensing devices, and is buried in an isolation trench formed between the first plane and the second plane; a light shielding layer which is formed on an upper part of the second plane of the semiconductor layer and is formed on an upper part of a partial area of the light sensing devices; and a wiring layer which is formed on an upper part of the first plane of the semiconductor layer. The objective of the present invention is to provide the image sensor which has good automatic focusing ability and can improve isolation characteristics among unit pixels included in a pixel array.