发明名称 |
CMOS-compatible polycide fuse structure and method of fabricating same |
摘要 |
CMOS-compatible polycide fuse structures and methods of fabricating CMOS-compatible polycide fuse structures are described. In an example, a semiconductor structure includes a substrate. A polycide fuse structure is disposed above the substrate and includes silicon and a metal. A metal oxide semiconductor (MOS) transistor structure is disposed above the substrate and includes a metal gate electrode. |
申请公布号 |
GB2529955(A) |
申请公布日期 |
2016.03.09 |
申请号 |
GB20150020616 |
申请日期 |
2013.06.25 |
申请人 |
INTEL CORPORATION |
发明人 |
JENG-YA D YEH;CHIA-HONG JAN;WALID M HAFEZ;JOODONG PARK |
分类号 |
H01L21/8234;H01L21/336;H01L23/525;H01L27/088;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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