Graphene-base transistor having germanium-graphene-germanium stack

摘要

A graphene-base transistor comprising a layer stack of a first Germanium layer, a base layer of graphene and a second Germanium layer, the base layer sharing a first interface with the first Germanium layer and a second interface with the second Germanium layer. By virtue of the layer stack, which comprises the graphene base layer sandwiched between the first and second Germanium layers, the graphene-base transistor of the present invention can achieve particularly high operational frequencies, in particular 3 THz and even higher.