| 摘要 |
A method of fabricating a semiconductor device cell (46) at a surface of a silicon carbide (SiC) semiconductor layer includes forming a segmented source and body contact (SSBC) (22) of the semiconductor device cell over the surface of the SiC semiconductor layer. The SSBC includes a body contact portion disposed over the surface of the semiconductor layer and proximate to a body contact region (44) of the semiconductor device cell, wherein the body contact portion is substantially disposed over the centre of the semiconductor device cell. The SSBC also includes at least one source contact portion disposed over the surface of the semiconductor layer and proximate to a source contact region (42) of the semiconductor device cell, wherein the at least one source contact portion only partially surrounds the body contact portion of the SSBC. |
