| 摘要 |
The semiconductor device 100 of the present invention includes: a semiconductor base body 110 having an n + -type semiconductor layer 112 and an n - -type semiconductor layer 114; p + -type diffusion regions 120 selectively formed on a surface of the n - -type semiconductor layer 114; and a barrier metal layer 130 formed on a surface of the n - -type semiconductor layer 114 and surfaces of p + -type diffusion regions 120, forming a Schottky junction between the barrier metal layer 130 and the n - -type semiconductor layer 114, and forming an ohmic junction between the barrier metal layer 130 and the p + -type diffusion regions 120, wherein platinum which is heavy metal is diffused into the semiconductor base body 110 such that a concentration of platinum becomes maximum in a surface of the n - -type semiconductor layer 114. The semiconductor device 100 of the present invention can lower a forward drop voltage VF or can shorten a reverse recovery time trr while maintaining a high reverse withstand voltage VR and a low leak current IR. Further, the semiconductor device 100 of the present invention can acquire an excellent soft recovery characteristic. |
