发明名称 基板支持体、半導体製造装置
摘要 A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.
申请公布号 JP5880297(B2) 申请公布日期 2016.03.08
申请号 JP20120129717 申请日期 2012.06.07
申请人 三菱電機株式会社 发明人 大野 彰仁;川津 善平
分类号 H01L21/205;C23C16/458;H01L21/683 主分类号 H01L21/205
代理机构 代理人
主权项
地址