| 发明名称 | Pickup device structure within a device isolation region | ||
| 摘要 | A device includes a device isolation region formed into a semiconductor substrate, a doped pickup region formed into the device isolation region, a dummy gate structure that includes at least one structure that partially surrounds the doped pickup region, and a via connected to the doped pickup region. | ||
| 申请公布号 | US9281334(B2) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201414520965 | 申请日期 | 2014.10.22 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Kao Min-Feng;Yaung Dun-Nian;Liu Jen-Cheng;Hsu Tzu-Hsuan;Chen Szu-Ying;Hsu Wei-Cheng;Tseng Hsiao-Hui |
| 分类号 | H01L27/146;H01L31/18;H01L27/144;H01L31/102 | 主分类号 | H01L27/146 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A device comprising: a device isolation region formed into a semiconductor substrate; a doped pickup region formed into the device isolation region; a dummy gate structure that includes at least one structure that partially surrounds the doped pickup region; and a via connected to the doped pickup region. | ||
| 地址 | Hsin-Chu TW | ||