Semiconductor device and manufacturing method of the same

摘要

A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; an interlayer insulating film formed on the semiconductor substrate and having a main surface; a first wiring and a second wiring which are embedded in the interlayer insulating film and are adjacent to each other; a damage layer positioned between the first wiring and the second wiring and formed on the main surface of the interlayer insulating film; and an electric field relaxation layer formed in the interlayer insulating film below the damage layer, wherein the first wiring and the second wiring are mainly made of a copper film, and the damage layer and the electric field relaxation layer are layers containing nitrogen, and a nitrogen concentration of the electric field relaxation layer is higher than a nitrogen concentration of the damage layer.