NANO-STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

An embodiment of the present invention provides a nanostructure semiconductor light emitting device for improving internal efficiency. The nanostructure semiconductor light emitting device includes a base layer made of a first conductivity type nitride semiconductor, nanolight emitting structures which are separated from each other on the base. Each of the nanolight emitting structures includes a nanocore made of the first conductivity type nitride semiconductor, an active layer which has a quantum well which has a first and a second region which are arranged on the surface of the nanocore and have different indium composition ratios according to a thickness direction, and a second conductivity type nitride semiconductor layer arranged on the active layer. The indium composition ratio of the first region is higher than that of the second region.