| 摘要 |
The purpose of the present invention is to ensure a sufficiently large heat release area for cooling a power semiconductor element, so as to improve the cooling efficiency. A second alternate current conductor plate (318) and a direct current negative electrode conductor plate (319) are arranged so as to face first electrode surfaces of an upper arm IGBT (155) and a lower arm IGBT (157) where emitter electrodes are formed, respectively, and are connected electrically with these emitter electrodes, respectively. A second upper arm signal conductor (324U2) and a second lower arm signal conductor (324L2) are connected electrically with kelvin emitter electrodes, respectively, the kelvin emitter electrodes being for measuring a reference potential of a drive signal to be fed to gate electrodes (403). The second alternate current conductor plate (318) and the second upper arm signal conductor (324U2) are electrically connected, and the direct current negative electrode conductor plate (319) and the second lower arm signal conductor (324L2) are electrically connected, whereby a part of the second alternate current conductor plate (318) and a part of the direct current negative electrode conductor plate (319) are used as kelvin emitter electrodes. |
