Non-volatile storage having oxide/nitride sidewall

摘要

Non-volatile storage devices and methods for fabricating non-volatile storage device are described. Sidewalls of the memory cells and their associated word line may be covered with silicon oxide. Silicon nitride covers the silicon oxide adjacent to the word lines, which may provide protection for the word lines during fabrication. However, silicon nitride can trap charges, which can degrade operation if the trapped charges are near a charge trapping region of a memory cell. Thus, the silicon nitride does not cover the silicon oxide adjacent to charge storage regions of the memory cells, which can improve device operation. For example, memory cell current may be increased. Techniques for forming such a device are also disclosed. One aspect includes a method that uses a sacrificial material to control formation of a silicon nitride layer when forming a memory device.

主权项

1. A memory device comprising:
a plurality of lines of memory cells, the memory cells comprising:
a charge storage region having sidewalls; anda control gate; a plurality of word lines each having sidewalls, each of the word lines being associated with a line of the memory cells, each of the word lines being coupled to the control gates of the memory cells with which it is associated; first oxide regions that cover the sidewalls of the charge storage regions; second oxide regions that cover the sidewalls of the word lines; nitride regions that cover the second oxide regions; and electrical isolation regions other than silicon nitride adjacent to the first oxide regions that cover the sidewalls of the charge storage regions.