Semiconductor memory device and a reading method thereof

摘要

A semiconductor memory device may include a common source line controller configured to provide a channel current to a cell string via a common source line during a read operation and a page buffer configured to detect data stored in a selected memory cell by detecting a current of the bit line when the channel current is provided. The page buffer may selectively bias the bit line to maintain a voltage of the bit line to be the same as or higher than a reference voltage.

主权项

1. A semiconductor memory device, comprising:
a cell string including a plurality of memory cells coupled in series between a common source line and a bit line; a common source line controller suitable for providing a channel current to the cell string via the common source line during a read operation; and a page buffer suitable for detecting data stored in a memory cell selected from the plurality of memory cells by detecting a current of the bit line when the channel current is provided, wherein the bit line has a first voltage when the channel current flows from the common source line controller to the bit line, and the page buffer provides a current passage between a power source and the bit line to maintain a voltage of the bit line to be the same as or higher than a reference voltage when the channel current from the common source line controller is blocked from the bit line, the reference voltage being lower than the first voltage.