Technique for optimizing static random-access memory passive power consumption

摘要

A static read-only memory (SRAM) includes one or more bit cell rows that each includes a collection of bit cells. Each bit cell row is coupled to two or more different wordlines, where each wordline associated with a given bit cell row provides memory access to a different subset of bit cells within that bit cell row.

主权项

1. A computer-implemented method for performing a memory access operation with a memory module, the method comprising:
identifying a row of bit cells residing within the memory module; determining that the memory access operation involves a subset of bit cells within the row of bit cells, wherein each bit cell in the subset of bit cells is indexed with a numerical value having a first parity; pre-charging the subset of bit cells via a wordline coupled to the subset of bit cells without pre-charging bit cells within the row of bit cells indexed with a numerical value having a second parity; and performing the memory access operation with the subset of bit cells.