| 主权项 |
1. A high-frequency device comprising:
a substrate including a plurality of layers that are stacked on top of one another and include at least one dielectric layer and at least one magnetic layer; first and second terminals; at least one pattern conductor formed on one of the plurality of layers; at least one via conductor extending through one of the plurality of layers, wherein the at least one pattern conductor and the at least one via conductor connect the first and second terminals to each other and form a signal line that transmits a predetermined high-frequency signal, wherein a first portion of the signal line includes at least one of: a via conductor extending through one magnetic layer and a pattern conductor sandwiched between two magnetic layers, wherein the first portion has a predetermined resistance to the high-frequency signal, wherein a second portion of the signal line includes at least one of a capacitor formed of two pattern electrodes in such a manner that at least one dielectric layer is sandwiched therebetween and no magnetic layers are sandwiched therebetween, and an inductor including a pattern conductor formed on at least one dielectric layer, wherein the high-frequency device has predetermined impedances to the high-frequency signal at the first and second terminals; and a ground terminal, wherein the signal line includes a first signal line connecting the first and second terminals to each other, and a second signal line connecting a connection node on the first signal line and the ground terminal to each other, wherein the first signal line includes a first capacitor between the first terminal and the connection node connected to the second signal line, the first capacitor being formed of two pattern conductors in such a manner that at least one dielectric layer is sandwiched therebetween and no magnetic layers are sandwiched therebetween, wherein the first signal line includes a first pattern conductor sandwiched between two magnetic layers and connected in parallel with the first capacitor, wherein the first signal line includes a second capacitor between the second terminal and the connection node connected to the second signal line, the second capacitor being formed of two pattern conductors in such a manner that at least one dielectric layer is sandwiched therebetween and no magnetic layers are sandwiched therebetween, wherein the first signal line includes a second pattern conductor sandwiched between two magnetic layers and connected in parallel with the second capacitor, and wherein the second signal line includes an inductor including a pattern conductor formed on at least one dielectric layer. |
