发明名称 Method for preparing monosilane using trialkoxysilane
摘要 Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.
申请公布号 US9278864(B2) 申请公布日期 2016.03.08
申请号 US201314432900 申请日期 2013.10.02
申请人 OCI COMPANY LTD.;INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES 发明人 Kim Taek Joong;Kim Yong Il;Kim Kyung Yeol;Kim Deok Yun;Khatam Ashurov;Shavkat Salikhov;Vladimir Rotshteyn;Khekayat Ashurova;Aziz Kurbanov;Ilyos Abdisaidov;Sultan Azizov;Rustam Ashurov
分类号 C01B33/04;B01J23/72 主分类号 C01B33/04
代理机构 Hauptman Ham, LLP 代理人 Hauptman Ham, LLP
主权项 1. A method for preparing monosilane, comprising: (a) performing wet pulverization of silicon particles in a liquid-phase solvent until the silicon particles have a particle size of 30 μm to 100 μm; (b) continuously supplying a suspension, which comprises the pulverized silicon particles obtained in step (a) and the solvent, into a reactor, followed by synthesizing alkoxysilane of triethoxysilane and tetraethoxysilane through reaction of the pulverized silicon particles with anhydrous ethyl alcohol using a copper-based catalyst; and (c) synthesizing monosilane gas from the for obtained triethoxysilane using sodium ethoxide as a catalyst.
地址 Seoul KR