发明名称 |
Method for preparing monosilane using trialkoxysilane |
摘要 |
Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane. |
申请公布号 |
US9278864(B2) |
申请公布日期 |
2016.03.08 |
申请号 |
US201314432900 |
申请日期 |
2013.10.02 |
申请人 |
OCI COMPANY LTD.;INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES |
发明人 |
Kim Taek Joong;Kim Yong Il;Kim Kyung Yeol;Kim Deok Yun;Khatam Ashurov;Shavkat Salikhov;Vladimir Rotshteyn;Khekayat Ashurova;Aziz Kurbanov;Ilyos Abdisaidov;Sultan Azizov;Rustam Ashurov |
分类号 |
C01B33/04;B01J23/72 |
主分类号 |
C01B33/04 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A method for preparing monosilane, comprising:
(a) performing wet pulverization of silicon particles in a liquid-phase solvent until the silicon particles have a particle size of 30 μm to 100 μm; (b) continuously supplying a suspension, which comprises the pulverized silicon particles obtained in step (a) and the solvent, into a reactor, followed by synthesizing alkoxysilane of triethoxysilane and tetraethoxysilane through reaction of the pulverized silicon particles with anhydrous ethyl alcohol using a copper-based catalyst; and (c) synthesizing monosilane gas from the for obtained triethoxysilane using sodium ethoxide as a catalyst. |
地址 |
Seoul KR |