III-nitride nanowire LED with strain modified surface active region and method of making thereof

摘要

A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.

主权项

1. A nanowire device, comprising:
a semiconductor nanowire core; and a first semiconductor shell located radially around the semiconductor nanowire core; and a second semiconductor shell located radially between the semiconductor nanowire core and the first semiconductor shell; wherein: the first semiconductor shell has a non-uniform surface profile having at least 3 peaks; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley; each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley; the device comprises a light emitting diode (LED) device and the first semiconductor shell comprises an active region quantum well shell; the second semiconductor shell has a non-uniform surface profile having at least 3 peaks; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley; and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.