Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes stacked groups each including interlayer insulating patterns and conductive patterns and stacked in at least two tiers, wherein the insulating patterns and the conductive patterns are alternately stacked over a substrate and separated by slits, and a support body including holes and formed between the stacked groups.

主权项

1. A semiconductor device, comprising:
a first direction in a cross-section view and a second direction in a plan view, wherein the second direction is perpendicular to the first direction; first stacked groups each including first interlayer insulating patterns and first conductive patterns alternately stacked over a substrate in the first direction; second stacked groups each including second interlayer insulating patterns and second conductive patterns alternately stacked over the first stacked groups in the first direction; a plurality of channel layers passing through the first stacked group, a support body, and the second stacked group in the first direction; first slits located between the first stacked groups to completely separate the first stacked groups from each other in the second direction; second slits located between the second stacked groups to completely separate the second stacked groups from each other in the second direction; and the support body including holes arranged at a predetermined interval and overlapping the first and second slits, wherein the support body is formed between the first stacked groups and the second stacked groups in the first direction.