Manufacturing method of epitaxial silicon wafer

摘要

A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R≦2.0×10-4X−2.9, where X (Ω·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for lowing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.

主权项

1. A manufacturing method of an epitaxial silicon wafer comprising a silicon wafer and an epitaxial film provided on a surface of the silicon wafer, the method comprising:
growing the epitaxial film on the silicon wafer in a reaction container; and reducing a temperature of the epitaxial silicon wafer from a temperature at which the epitaxial film is grown, wherein, while reducing the temperature of the epitaxial silicon wafer, a temperature reduction rate of the temperature of the epitaxial silicon wafer is controlled to satisfy a formula R≦2.0×10−4X−2.9 . . . (formula (1)), where X (Ω·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for reducing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.