Plasma processing method

摘要

In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.

主权项

1. A method of processing a laminate including a magnetic layer by using a plasma processing apparatus including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, the method comprising the steps of:
plasma-etching the laminate while applying a first radio-frequency voltage to the Faraday shield to form a plasma-etched laminate, and forming a deposit layer on the plasma-etched laminate by plasma processing while applying a second radio-frequency voltage to the Faraday shield, wherein the second radio-frequency voltage is higher than the first radio-frequency voltage.