| 主权项 |
1. A semiconductor device comprising:
an antifuse element storing information as one of a broken state and an unbroken state thereof; and a measurement unit operative to perform a first operation that is carried out to determine whether the antifuse element is in the broken state or the unbroken state and a second operation that is carried out to measure a resistance value relative to a resistance value of the antifuse element in the broken state, wherein the measurement unit comprises: a determination voltage generating unit generating a determination voltage; a measurement voltage generating unit generating measurement voltage that is independent of the determination voltage; and a comparator comparing, in the first operation, a voltage level of one end of the antifuse element with the determination voltage and comparing, in the second operation, the voltage level of the one end of the antifuse element with the measurement voltage. |
