Fast programming memory device

摘要

In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.

主权项

1. A memory device comprising:
a data node; a reference node; word lines; a group of non-volatile memory cells serially coupled between the data node and the reference node, the group of non-volatile memory cells coupled to the word lines such that each non-volatile memory cell of the group of non-volatile memory cells is coupled to one of the word lines; and a control circuit operable to apply a same voltage to the word lines during retrieving of data from a selected non-volatile memory cell of the group of non-volatile memory.