| 摘要 |
The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga 2 O 3 , Al 2 O 3 , SiO 2 and ZnO according to the following percentage by mass: 0.5%ˆ¼10 % of Ga 2 O 3 , 0.5%ˆ¼5 % of Al 2 O 3 , 0.5 % ˆ¼1.5 % of SiO 2 , and the residue of ZnO; (2)sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2Paˆ¼5Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15sccmˆ¼25sccm, adopting a sputtering power of 40Wˆ¼200W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film. |
