| 发明名称 | Non-volatile memory using bi-directional resistive elements and capacitive elements | ||
| 摘要 | A memory cell includes a bi-directional resistive memory element, a first transistor, and a capacitive element. The bi-directional resistive memory element has a first terminal directly connected to a first power rail and a second terminal coupled to an internal node. The first transistor has a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to one of the first power rail, a second power rail, or a read wordline. The capacitive element includes a first terminal coupled to the internal node and a second terminal coupled to the read wordline. | ||
| 申请公布号 | US9281042(B1) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201414572780 | 申请日期 | 2014.12.17 |
| 申请人 | FREESCALE SEMICONDUCTOR, INC. | 发明人 | Pelley Perry H.;Baker, Jr. Frank K.;Ramaraju Ravindraraj |
| 分类号 | G11C13/00;G11C11/16;G11C11/24 | 主分类号 | G11C13/00 |
| 代理机构 | The Mason Group Patent Specialists, LLC | 代理人 | Davis Valerie M.;The Mason Group Patent Specialists, LLC |
| 主权项 | 1. A memory cell comprising: a bi-directional resistive memory element having a first terminal directly connected to a first power rail and a second terminal coupled to an internal node; a first transistor having a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to one of the first power rail, a second power rail, or a read wordline; and a capacitive element having a first terminal coupled to the internal node and a second terminal coupled to the read wordline. | ||
| 地址 | Austin TX US | ||