Method of programming a nonvolatile memory device

摘要

In method of programming a nonvolatile memory device including a plurality of multi-level cells that store multi-bit data according to example embodiments, a least significant bit (LSB) program operation is performed to program LSBs of the multi-bit data in the plurality of multi-level cells. A most significant bit (MSB) program operation is performed to program MSBs of the multi-bit data in the plurality of multi-level cells. To perform the MSB program, an MSB pre-program operation is performed on first multi-level cells, from among the plurality of multi-level cells, that are to be programmed to a highest target program state among a plurality of target program states, and an MSB main program operation is performed to program the plurality of multi-level cells to the plurality of target program states corresponding to the multi-bit data.

主权项

1. A method of programming a nonvolatile memory device including a plurality of multi-level cells coupled to a wordline, the method comprising:
performing a least significant bit (LSB) program operation that programs LSBs of 2-bit data in the plurality of multi-level cells; and performing a most significant bit (MSB) program operation that programs MSBs of the 2-bit data in the plurality of multi-level cells, the MSB program operation including,
an MSB pre-program operation that pre-programs first multi-level cells from among the plurality of multi-level cells to an intermediate program state, the first multi-level cells being ones of the plurality of multi-level cells that are to be programmed to a highest target program state among a plurality of target program states, andan MSB main program operation, separate from the MSB pre-program operation, that programs the plurality of multi-level cells to the plurality of target program states corresponding to the 2-bit data by applying at least one program pulse to the plurality of multi-level cells, the MSB main program operation including a verify operation to verify that the plurality of multi-level cells are programmed to the plurality of target program states, and the MSB pre-program operation comprising,
applying a program voltage to first bitlines coupled to the first multi-level cells,applying an inhibit voltage to second bitlines coupled to second multi-level cells other than the first multi-level cells from among the plurality of multi-level cells, the second multi-level cells including ones of the plurality of multi-level cells that are to be programmed to one of the plurality of target program states adjacent to the highest target program state, and the inhibit voltage being higher than the program voltage, andapplying a one-shot pulse to the wordline to pre-program the first multi-level cells to the intermediate program state corresponding to the highest target program state, wherein a verify operation for the intermediate program state is not performed.