Memory sense amplifier and column pre-charger

摘要

A memory includes a number of storage elements connected to a pair of bit-lines, a bit-line pre-charging circuit, a sense amplifier connected to the pair of bit-lines through a column-select switch, a transition detection circuit connected to an output of the sense amplifier, and a local pre-charge control circuit connected to the transition detection circuit and having a local pre-charge control signal output connected to the bit-line pre-charging circuit.

主权项

1. A memory comprising:
a plurality of storage elements connected to a pair of bit-lines; a bit-line pre-charging circuit; a sense amplifier connected to the pair of bit-lines through a column-select switch; a transition detection circuit connected to an output of the sense amplifier yielding a transition detected signal; and a local pre-charge control circuit comprising a first input receiving the transition detected signal, and a second input receiving a global pre-charge signal, the local pre-charge control circuit comprising an output yielding a local pre-charge control signal, wherein the output of the local pre-charge control circuit is connected to the bit-line pre-charging circuit, and wherein the local pre-charge control circuit is operable to assert the output of the local pre-charge control circuit based on both the global pre-charge signal and the transition detected signal being in an asserted state.