| 发明名称 | Lithographic method and apparatus | ||
| 摘要 | A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern. | ||
| 申请公布号 | US9280064(B2) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201213685467 | 申请日期 | 2012.11.26 |
| 申请人 | ASML NETHERLANDS B.V. | 发明人 | Engblom Peter David;Köhler Carsten Andreas;Staals Frank;De Winter Laurentius Cornelius |
| 分类号 | G03F7/20;G03F1/36;G03F1/00 | 主分类号 | G03F7/20 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method comprising using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern. | ||
| 地址 | Veldhoven NL | ||