| 摘要 |
Disclosed is an etching solution composite. The disclosed etching solution composite includes: hydrogen peroxide, an etching inhibitor, chelate, etching additives, an oxide semiconductor protective agent, a pH regulator, and water. According to this, the etching solution composite according to the present invention is characterized by a fact that an oxide semiconductor is not etched during a process of etching a copper-molybdenum alloy by having a high pH value without a fluorinate compound. Accordingly, the etching solution composite according to the present invention obtains an effect of minimizing failures which may occur during the etching process. |
