| 摘要 |
Provided is a semiconductor device including a substrate and a stack layer. The substrate includes a first, a second, and a third region, wherein the third region is disposed between the first region and the second region. The substrate in the third region has a first step height since an upper end surface of the substrate in the first region is lower than that of the substrate in the second region. In addition, the stack layer is disposed on the substrate which is in the first and the third region, and the upper end surface of the stack layer in the first and the third region is practically the same plane as that of the substrate in the second region. According to the present invention, the semiconductor device can reduce the step height in a boundary region between a memory cell array region and a peripheral circuit region. |
