发明名称 |
Semiconductor device. |
摘要 |
In a semiconductor device provided with a MOSFET part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance semiconductor layer and a drift layer, the gate pad part includes: the low resistance semiconductor layer; the drift layer formed on the low resistance semiconductor layer; a poly-silicon layer constituting a conductor layer and a gate pad electrode formed above the drift layer over the whole area of the gate pad part with a field insulation layer interposed therebetween; and a gate oscillation suppressing structure where a p-type diffusion region electrically connected with the a source electrode layer and a p-type impurity non-diffusion region are alternately formed on a surface of the drift layer. |
申请公布号 |
NL2014502(A) |
申请公布日期 |
2016.03.08 |
申请号 |
NL20152014502 |
申请日期 |
2015.03.23 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
发明人 |
NOBUKI MIYAKOSHI |
分类号 |
H01L29/78;H01L29/06;H01L29/08;H01L29/10;H01L29/423;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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