| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can prevent mask collapse and further prevent side etching of AlCu wiring. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming an AlCu wiring layer 34 by sequentially laminating an under side TiN/Ti film 29, an AlCu film 30 and an upper side TiN/Ti film 31 on a second interlayer film 17; subsequently, forming a laminated film 36 composed of a SiO<SB POS="POST">2</SB>film 33 and an SiC film 35 on the AlCu wiring layer 34; forming a hard mask 37 by patterning the laminated film 36; forming, by dry etching the AlCu wiring layer 34 by using the hard mask 37, a side wall protection film 32 that contains a reaction product containing C dissociating from the SiC film 35 by the etching on a lateral face of the AlCu film 30 in the course of etching; and concurrently, forming first AlCu wiring 20 by patterning the AlCu wiring layer 34. <P>COPYRIGHT: (C)2013,JPO&INPIT |
