发明名称 |
Surface emitting laser, surface-emitting-laser array, and image forming apparatus |
摘要 |
The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression:
(¼+N)λ<|L|<(¾+N)λ
where N is an integer. |
申请公布号 |
US9281660(B2) |
申请公布日期 |
2016.03.08 |
申请号 |
US201414519609 |
申请日期 |
2014.10.21 |
申请人 |
Canon Kabushiki Kaisha |
发明人 |
Ikuta Mitsuhiro |
分类号 |
H01S5/00;H01S5/18;H01S5/183;B41J2/455;B41J2/47;H01S3/02;H01S5/42 |
主分类号 |
H01S5/00 |
代理机构 |
Canon USA Inc. IP Division |
代理人 |
Canon USA Inc. IP Division |
主权项 |
1. A surface emitting laser configured to oscillate at a wavelength λ, comprising:
a substrate; a multilayer structure provided on the substrate and in which layers including a rear mirror, an active layer, and a front minor are stacked; a first stepped structure provided over a front surface of the front mirror and including a first portion extending in a first area defined in a central part of an emission area and a second portion extending in a second area defined on the outer side of the first area within the emission area, the first and second portions having different heights; and a second stepped structure provided between the first stepped structure and the front mirror, and including a third portion extending in a third area defined in the central part of the emission area and a fourth portion extending in a fourth area defined on the outer side of the third area, wherein, in terms of an optical path length from a plane defined on the outside of the surface emitting laser and extending perpendicular to a stacking direction of the multilayer structure to the front surface of the front mirror, a difference L between the optical path length in the first area and the optical path length in the second area satisfies the following expression:
(¼+N)λ<|L|<(¾+N)λ where N is an integer, wherein a refractive index of a material forming the second stepped structure is different from a refractive index of a material forming the first stepped structure, and wherein a reflectance of a structure, including the front minor, the first stepped structure and the second stepped structure, is higher in a portion corresponding to the third area than in a portion corresponding to the fourth area. |
地址 |
Tokyo JP |