Semiconductor device

摘要

An infrared photodiode that is a semiconductor device includes a substrate, a buffer layer formed of GaSb, and an absorption layer including a multiple quantum well structure. The multiple quantum well structure includes a stack of unit structures each including a plurality of component layers. Each unit structure includes a first component layer formed of InAs1-aSba where the ratio a is 0 or more and 0.05 or less, a second component layer formed of GaSb, and a third component layer formed of InSbxAs1-x where the ratio x is more than 0 and less than 1. The third component layer is disposed so as to be in contact with one main surface of the second component layer. The other main surface of the second component layer is in contact with the first component layer within the unit structure. The third component layer has a thickness of 0.1 nm or more and 0.9 nm or less.

主权项

1. A semiconductor device comprising:
a substrate formed of a III-V compound semiconductor; a buffer layer disposed on the substrate and formed of GaSb; and an absorption layer formed on the buffer layer and including a multiple quantum well structure formed of III-V compound semiconductors, wherein the multiple quantum well structure includes a stack of unit structures each including a plurality of component layers, each of the unit structures includes a first component layer formed of InAs1-aSba a second component layer formed of GaSb, and a third component layer formed of InSbxAs1-x in one unit structure among the unit structures, the third component layer is disposed so as to be in contact with one of main surfaces of the second component layer, another one of the main surfaces of the second component layer is in contact with the first component layer present within the one unit structure or within another unit structure disposed on the one unit structure, the ratio a in InAs1-aSba forming the first component layer is 0 or more and 0.05 or less, the ratio x in InSbxAs1-x forming the third component layer is more than 0 and less than 1, and the third component layer has a thickness of 0.1 nm or more and 0.9 nm or less.