Semiconductor device including a structure for screening connectivity of a TSV

摘要

A semiconductor device is provided to check through silicon via (TSV) connectivity at a wafer level. The semiconductor device includes a first metal layer formed over a through silicon via (TSV), a second metal layer and a third metal layer formed at both sides of the first metal layer to be electrically coupled to the TSV, and a fourth metal layer formed over the first metal layer to be electrically coupled to the first metal layer.

主权项

1. A semiconductor device, comprising:
a first metal layer disposed over a middle region of a top surface of a through silicon via (TSV) having an elliptical shape in a plan view, the first metal layer being directly connected to a center of the top surface of the TSV, wherein the middle region represents a portion of the top surface crossing the center of the top surface and reaching edges of the top surface; a second metal layer and a third metal layer disposed at both sides of the first metal layer to be directly connected to the TSV, wherein the second metal layer and the third metal layer are configured to verify connectivity between the TSV and a chip at a wafer level; and a fourth metal layer disposed over the first metal layer and electrically coupled to the first metal layer, wherein the first metal layer transfers a signal of the fourth metal layer to the TSV, wherein the second metal layer and the third metal layer are disposed at the same level as the first metal layer, and wherein the TSV is completely filled with an electrode material only.