发明名称 Semiconductor memory
摘要 Semiconductor memories are provided. The Semiconductor memory includes a plurality of sense amplifiers, plurality sets of master data line segments and a plurality of memory segments. The plurality sets of master data line segments are arranged in a column direction. Each memory segment includes a plurality of memory cells, and is coupled to a set of corresponding master data line segments via a corresponding sense amplifier. Adjacent sets of corresponding master data line segments are coupled together. When accessing memory data, the memory data are transferred by the adjacent sets of corresponding master data line segments which are coupled together.
申请公布号 US9281018(B2) 申请公布日期 2016.03.08
申请号 US201414341116 申请日期 2014.07.25
申请人 WINBOND ELECTRONICS CORP. 发明人 Chang Kuen-Huei
分类号 G11C5/06;G11C7/10;G11C7/06;G11C7/12 主分类号 G11C5/06
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A semiconductor memory, comprising: a plurality of sense amplifiers; a plurality sets of master data line segments, arranged in a column direction; and a plurality of memory segments, each comprises a plurality of memory cells, and is coupled to a set of corresponding master data line segments via a corresponding sense amplifier; wherein adjacent sets of corresponding master data line segments are coupled together via the corresponding sense amplifier; each set of corresponding master data line segments comprises two local master data lines; when accessing memory data, the memory data are transferred by the adjacent sets of corresponding master data line segments which are coupled together; and during a read operation, a first corresponding sense amplifier of a memory segment which has not been accessed transfers the memory data via only one of the two local master data lines.
地址 Taichung TW
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