METHOD OF FABRICATING SEMICONDUCTOR DEVICES USING NANOWIRES

摘要

Explained is a method for forming a semiconductor device using a nanowire, which includes the steps of: forming guide patterns exposing base patterns; forming first nanowires on the base patterns by performing a first nanowire growth process; forming a first molding insulation layer which fills a gap between the first nanowires; forming holes exposing surfaces of the base patterns by removing the nanowires; and forming first electrodes by filling a conductor in the hole. The objective of the present invention is to provide a capacitor structure of the semiconductor device using the nanowire and a method for forming the same.