Phase change memory stack with treated sidewalls

摘要

Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

主权项

1. A method for fabricating a memory stack, the method comprising:
forming the memory stack out of a plurality of elements; forming an adhesion species on at least one sidewall of the memory stack using a plasma doping process; and forming a sidewall liner on the at least one sidewall of the memory stack such that the adhesion species intermixes with an element of the memory stack and the sidewall liner.