Light emitting device and light emitting device package

摘要

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

主权项

1. A light emitting device comprising:
a substrate; a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch; a n type nitride semiconductor layer formed on the front surface of the substrate to cover the convex pattern; a light emitting layer formed on the n type semiconductor layer, the substrate being transparent to an emission wavelength of the light emitting layer and positioned to receive light from the light emitting layer; a p type nitride semiconductor layer formed on the light emitting layer; a recess extending through at least the p type nitride semiconductor layer and the light emitting layer, the recess exposing an exposed portion of the n type nitride semiconductor layer; a p side electrode that is electrically connected to the p type nitride semiconductor layer, the p side electrode including:
a first p side electrode portion; anda second p side electrode portion connected to the first p side electrode portion and extending in a longitudinal direction of the substrate; and a n side electrode formed on the exposed portion of the n type nitride semiconductor layer, the n side electrode including:
a first n side electrode portion located opposite the first p side electrode portion in the longitudinal direction of the substrate; anda second n side electrode portion extending from the first n side electrode portion in the longitudinal direction of the substrate and parallel to the second p side electrode portion, wherein the convex pattern further includes, for each of the convex portions, a sub convex pattern comprising a plurality of fine convex portions discretely arranged at the top of the respective convex portion with a second pitch, and a base supporting the sub convex pattern, the second pitch being smaller than the first pitch, and wherein the n type nitride semiconductor layer spans between tops of the fine convex portions without filling spaces between adjacent fine convex portions, and the light emitting device includes spaces partitioned by the fine convex portions and the n type nitride semiconductor layer spanning between the tops of the fine convex portions.