Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, forming a gate insulating film provided over the oxide semiconductor film, forming a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and forming a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over a substrate having an insulating surface; forming an insulating film over the oxide semiconductor film so that the insulating film covers an edge portion of the oxide semiconductor film; exposing the insulating film and the oxide semiconductor film to plasma generated under an atmosphere containing oxygen; forming a gate insulating film over the oxide semiconductor film at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated after the step of exposing the insulating film and the oxide semiconductor film to plasma; forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween; and forming a source wiring and a drain wiring electrically connected the oxide semiconductor film, wherein the edge portion of the insulating film is curved, and wherein the gate insulating film is formed by using plasma generated by a microwave.