发明名称 |
Metal gate structure and manufacturing method thereof |
摘要 |
The present disclosure provides a semiconductor structure includes a gate structure disposed over a substrate, wherein the gate structure includes a high-k dielectric layer and a work function structure. The high-k dielectric layer includes a base portion and a side portion, the side portion is extended from an end of the base portion, the side portion is substantially orthogonal to the base portion. The work function structure includes a first metal disposed over the high-k dielectric layer and a second metal disposed over the first metal and including a bottom portion and a sidewall portion extended from an end of the bottom portion, wherein the first metal includes different materials from the second metal, and a length of an interface between the sidewall portion and the bottom portion to a length of the bottom portion within the high-k dielectric layer is in a predetermined ratio. |
申请公布号 |
US9281372(B2) |
申请公布日期 |
2016.03.08 |
申请号 |
US201414334004 |
申请日期 |
2014.07.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Kuang Shin-Jiun;Yu Tsung-Hsing;Sheu Yi-Ming;Lee Chun-Yi |
分类号 |
H01L29/00;H01L21/00;H01L29/49;H01L29/51;H01L21/28 |
主分类号 |
H01L29/00 |
代理机构 |
WPAT, P.C. |
代理人 |
WPAT, P.C. ;King Anthony |
主权项 |
1. A semiconductor structure, comprising:
a gate structure disposed over a substrate, wherein the gate structure comprises:
a high-k dielectric layer including a base portion and a side portion, wherein the side portion is extended from an end of the base portion, the side portion is substantially orthogonal to the base portion; anda work function structure comprising:
a first metal disposed over and along the base portion of the high-k dielectric layer; anda second metal disposed over the first metal and including a bottom portion and a sidewall portion extended from an end of the bottom portion, wherein an end of the first metal is protruded from the second metal towards the side portion of the high-k dielectric layer, and wherein the first metal includes different materials from the second metal, and a length of an interface between the sidewall portion and the bottom portion to a length of the bottom portion within the high-k dielectric layer is in a predetermined ratio, and the first metal is a work function metal of a first type and the second metal is a work function metal of a second type, and the first type is opposite to the second type. |
地址 |
Hsinchu TW |