Method for fabricating semiconductor device with paterned hard mask

摘要

A method for fabricating a semiconductor device includes the following steps. First, a first interlayer dielectric is formed on a substrate. Then, a gate electrode is formed on the substrate so that the periphery of the gate electrode is surrounded by the first interlayer dielectric. Afterwards, a patterned mask layer is formed on the gate electrode, and a bottom surface of the patterned mask layer is level with a top surface of the first interlayer dielectric. A spacer is then formed on each sidewall of the gate electrode. Subsequently, a second interlayer dielectric is formed to cover a top surface and each side surface of the patterned mask layer. Finally, a self-aligned contact structure is formed in the first interlayer dielectric and the second interlayer dielectric.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a first interlayer dielectric on a substrate; forming a gate electrode on the substrate, wherein a periphery of the gate electrode is surrounded by the first interlayer dielectric; forming a patterned mask layer directly on the gate electrode, wherein a bottom surface of the patterned mask layer is substantially level with a top surface of the first interlayer dielectric; forming a spacer on each sidewall of the gate electrode after the step of forming the patterned mask layer; forming a second interlayer dielectric to cover a top surface and sidewalls of the patterned mask layer; and forming a self-aligned contact structure in the first interlayer dielectric and the second interlayer dielectric.