Radiation detection apparatus and radiation detection system

摘要

A radiation detection apparatus includes conversion elements including a first electrode, a semiconductor layer, and a second electrode that are divided for each pixel; switching elements electrically connected to the first electrodes; and a first insulating layer that separates the conversion elements of adjacent pixels. The semiconductor layer is located between the first and second electrodes. A periphery of the semiconductor layer is located outside peripheries of the first and second electrodes. The semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer, and an intrinsic semiconductor layer located between the first and second impurity semiconductor layers. Parameters of the apparatus are defined to set a residual charge 10 μs after the switching element is turned on to be not higher than 2%.

主权项

1. A radiation detection apparatus including a plurality of pixels, the apparatus comprising:
conversion elements including a first electrode, a semiconductor layer, and a second electrode that are divided for each pixel; switching elements electrically connected to the first electrodes; and a first insulating layer that separates the conversion elements of adjacent pixels, wherein the semiconductor layer is located between the first electrode and the second electrode, a periphery of the semiconductor layer is located outside a periphery of the first electrode and a periphery of the second electrode, the semiconductor layer includes a first impurity semiconductor layer including a portion in contact with the first electrode, a second impurity semiconductor layer including a portion in contact with the second electrode, and an intrinsic semiconductor layer located between the first impurity semiconductor layer and the second impurity semiconductor layer, and a length DL1 from a periphery of the first impurity semiconductor layer along the first impurity semiconductor layer up to the portion, in contact with the first electrode, of the first impurity semiconductor layer, a length DU from a periphery of the second impurity semiconductor layer along the second impurity semiconductor layer up to the portion, in contact with the second electrode, of the second impurity semiconductor layer, a sheet resistance R□L1 of the first impurity semiconductor layer, a sheet resistance R□U of the second impurity semiconductor layer, a pixel pitch P of the plurality of pixels, and an ON resistance Ron of the switching element are defined to set a residual charge 10 μs after the switching element is turned on to be not higher than 2%.