METHOD OF FORMING SEMICONDUCTOR DEVICES

摘要

The present invention relates to a method for producing a semiconductor device. More specifically, the purpose of the present invention is to provide a method for producing a semiconductor device which can be easily manufactured. The method for producing a semiconductor device includes the following steps: forming, on a substrate, an active pattern and a gate electrode which crosses the active pattern; forming a first contact which is connected to the active pattern on one side of the gate electrode; forming a second contact connected to the gate electrode; and forming a third contact connected to the first contact on the one side of the gate electrode. The third contact is formed by using a photomask which is different from the one used in the first contact, and the height of a bottom surface of the third contact is lower than that of a top surface of the first contact.