发明名称 光デバイスウエーハの加工方法
摘要 An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.
申请公布号 JP5878292(B2) 申请公布日期 2016.03.08
申请号 JP20100287348 申请日期 2010.12.24
申请人 株式会社ディスコ 发明人 森數 洋司;西野 曜子
分类号 H01L21/20;B23K26/38;B23K26/40;H01L21/301;H01L33/12;H01S5/323 主分类号 H01L21/20
代理机构 代理人
主权项
地址