| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a composite substrate which is capable of manufacturing a semiconductor device at a high yield even with a composite substrate in which at least any one of a part of an intermediate layer and a part of a support substrate is exposed. <P>SOLUTION: The method of manufacturing a composite substrate includes the steps of: preparing a first composite substrate 1 which contains a support substrate 10, an intermediate layer 20 that is arranged on at least a part of a main surface thereof, and a group III nitride layer 30a arranged on at least a part of a main surface thereof, with a main surface of the group III nitride layer 30a and at least any one of a part of the main surface of the intermediate layer 20 and a part of the main surface of the support substrate 10 being exposed; obtaining a second composite substrate 2 by selectively removing an exposed portion of the intermediate layer 20 of the first composite substrate 1 by etching; and obtaining a third composite substrate 3 by selectively removing an exposed portion of the main surface of the support substrate 10 of the second composite substrate 2 down to a predetermined depth by etching. <P>COPYRIGHT: (C)2013,JPO&INPIT |
