| 摘要 |
The invention provides an inductively coupled plasma processing method and an inductively coupled plasma processing apparatus, wherein the inductively coupled plasma processing is carried out according to the design of a desired processing distribution. The inductively coupled plasma processing operation apparatus provided with high-frequency antennas carries out a first processing operation and a second processing operation at different times so as to obtain the desired processing distribution on a substrate at the ending time. The high-frequency antennas are composed of an outside antenna and an inside antenna, wherein the outside antenna is supplied with high-frequency power to form a spiral outside induced electric field and the inside antenna concentrically arranged inside the outside antenna is also supplied with high-frequency power to form a spiral inside induced electric field. During the first processing period, a relatively large current flows through the inside antenna and the first processing operation is carried out by means of the plasma locally generated by the inside induced electric field corresponding to the inside antenna. During the second processing period, a relatively large current flows through the outside antenna and the second processing operation is carried out by means of the plasma locally generated by the outside induced electric field corresponding to the outside antenna. |
