发明名称 Refresh hidden eDRAM memory
摘要 A first data access request to a first row of a first memory array of the DRAM is received while a refresh operation in the first memory array is executing. The refresh operation is paused. The first data access request is executed, and simultaneously, the bits of the first row of the first memory array, including any updates indicated in the first data access request, are latched to a transfer register. The bits latched to the transfer register are written to a corresponding first row in a second memory array of the DRAM. A bank select logic is updated to indicate that subsequent data access requests to the first row in the first memory array will be executed from the second memory array. The refresh operation is then resumed.
申请公布号 US9281045(B1) 申请公布日期 2016.03.08
申请号 US201414571496 申请日期 2014.12.16
申请人 GLOBALFOUNDRIES INC. 发明人 Anand Darren L.;Bringivijayaraghavan Venkatraghavan;Rengarajan Krishnan S.
分类号 G11C11/24;G11C11/406;G11C11/4091;G11C11/4093;G11C11/4094;G11C11/4096 主分类号 G11C11/24
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Ivers Catherine;Calderon Andrew M.;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A method of operating a DRAM, comprising: receiving a first data access request to a first row of a first memory array of the DRAM while a refresh operation in the first memory array is executing; pausing the refresh operation; executing the first data access request, and simultaneously latching the bits of the first row of the first memory array, including any updates indicated in the first data access request, to a transfer register; writing the bits latched to the transfer register to a corresponding first row in a second memory array of the DRAM; updating a bank select logic to indicate that subsequent data access requests to the first row in the first memory array will be executed from the second memory array; and resuming the refresh operation.
地址 Grand Cayman KY