发明名称 Wiring substrate and semiconductor package
摘要 A wiring substrate includes a heat spreader, a first insulating layer provided on the heat spreader via an adhesion layer, the first insulating layer, a plurality of through wirings formed to fill through holes provided at the first insulating layer, respectively, a thermal diffusion wiring provided on the first insulating layer so as to be connected to the through wirings, the thermal diffusion wiring being configured not to be electrically connected to a semiconductor device, an electrical connection wiring provided on the first insulating layer, the electrical connection wiring being configured to be electrically connected to the semiconductor device, wherein the heat spreader is provided with a projection portion, made of a composition same as the heat spreader, at a surface of the heat spreader on which the adhesion layer is formed, the projection portion being aimed at least at an area overlapping the through wirings in a plan view.
申请公布号 US9282629(B2) 申请公布日期 2016.03.08
申请号 US201414583227 申请日期 2014.12.26
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 Horikawa Yasuyoshi;Denda Tatsuaki;Shimizu Hiroshi;Kobayashi Kazutaka
分类号 H01L23/367;H05K1/02;H05K3/00;H01L23/14;H01L21/48;H01L33/64 主分类号 H01L23/367
代理机构 IPUSA, PLLC 代理人 IPUSA, PLLC
主权项 1. A wiring substrate on which a semiconductor device is to be mounted, the wiring substrate comprising: a heat spreader; a first insulating layer provided on the heat spreader via an adhesion layer, the first insulating layer being provided with a plurality of through holes penetrating the first insulating layer in the thickness direction; a plurality of through wirings formed to fill the through holes provided at the first insulating layer, respectively; a thermal diffusion wiring provided on the first insulating layer so as to be connected to the through wirings, the thermal diffusion wiring being configured not to be electrically connected to the semiconductor device; an electrical connection wiring provided on the first insulating layer, the electrical connection wiring being configured to be electrically connected to the semiconductor device; and a second insulating layer provided on the first insulating layer and provided with a first open portion that exposes the electrical connection wiring and a second open portion that exposes the thermal diffusion wiring, wherein the heat spreader is provided with a projection portion at a surface of the heat spreader on which the adhesion layer is formed, wherein an end surface of each of the through wirings at an adhesion layer side and a bottom surface of the first insulating layer at an adhesion layer side are spaced apart from a front end of the projection portion, and the adhesion layer is filled between the through wirings and the first insulating layer, and the projection portion, wherein the projection portion is made of a composition same as the heat spreader, and wherein the projection portion is formed at least at an area overlapping the through wirings in a plan view.
地址 Nagano JP