Phase change memory cell with constriction structure

摘要

Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

主权项

1. A device comprising:
a first electrode and a second electrode; and a memory element directly contacting the first and second electrodes, the memory element including a programmable portion having a material configured to change between multiple phases, wherein the programmable portion is isolated from the first electrode by a first portion of the memory element, the programmable portion is isolated from the second electrode by a second portion of the memory element, each of the first and second portion having a material, the material of the first portion directly contacting the first electrode, the material of the second portion directly contacting the second electrode the memory element including an intermediate material between the first and second portions, the intermediate material being different from the material of each of the first portion, the second portion, and the programmable portion, and the intermediate material isolating the first portion from the second portion.