Transistor structure and manufacturing method thereof

摘要

A transistor structure including a gate, an insulation layer, a patterned semiconductor layer, a source, a drain and a light absorption layer and a manufacturing method thereof are provided. The gate is disposed on a substrate. An area of the gate overlaps an area of the patterned semiconductor layer. The insulation layer is disposed between the gate and the patterned semiconductor layer. The source and the drain are separated from each other and in contact with the patterned semiconductor layer. The patterned semiconductor layer is disposed between the light absorption layer and the substrate. An area of the light absorption layer overlaps an area of the patterned semiconductor layer. An absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer.

主权项

1. A transistor structure comprising:
a gate disposed on a substrate; an insulation layer; a patterned semiconductor layer, an area of the gate overlapping an area of the patterned semiconductor layer, the insulation layer located between the gate and the patterned semiconductor layer; a source and a drain separated from each other, and the source and the drain contacting the patterned semiconductor layer; a light absorption layer, the patterned semiconductor layer located between the light absorption layer and the substrate, and an area of the light absorption layer overlapping the area of the patterned semiconductor layer, wherein an absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer; and a protective layer, wherein the gate is located between the protective layer and the insulation layer, and the protective layer is located between the light absorption layer and the substrate.