Semiconductor device manufacturing method

摘要

To improve the performance of a semiconductor device, a semiconductor device manufacturing method includes an exposing process of performing pattern exposure of a resist film formed on a substrate by using EUV light reflected from a front surface of an EUV mask as a reflective mask. In this exposing process, the resist film is subjected to pattern exposure by repeating a process of irradiating the resist film with the EUV light by changing a focal position of the EUV light with which the resist film is irradiated, along a film thickness direction of the resist film. After this exposing process, the resist film subjected to pattern exposure is developed to form a resist pattern.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
(a) holding a first mask by a mask holding unit, the first mask having a first base, a first reflective film formed on a first front surface of the first base to reflect first exposure light, and a first absorber pattern formed on the first reflective film to absorb the first exposure light; (b) forming a first resist film on a first film to be etched, which is formed on a main surface of a first substrate; (c) after the step (b), holding the first substrate by a substrate holding unit; (d) irradiating the first front surface of the first mask being held by the mask holding unit with the first exposure light and irradiating the first resist film of the first substrate being held by the substrate holding unit with first reflected light, which is the first exposure light for irradiation reflected from the first front surface; (e) after the step (d), forming a first resist pattern by developing the first resist film; and (f) etching the first film to be etched, by using the first resist pattern as an etching mask, wherein, in the step (d), the irradiation of the first reflected light is repeated while a focal position of the first reflected light with which the first resist film is irradiated is changed along a film thickness direction of the first resist film, and in the step (d), the focal position of the first reflected light is changed in a range smaller than or equal to half of a depth of focus, the method further comprising the steps of: (g) before the step (a), determining a line width of the first absorber pattern, a first value being determined as the line width of the first absorber pattern so that a line width of the first resist pattern that is formed when the first mask does not have a phase defect is included in a first range set in advance; and (h) after the step (g) and before the step (a), manufacturing the first mask, the first mask having the first absorber pattern with a corrected line width obtained by correcting a second value that is smaller than the first value, the line width of the first absorber pattern being corrected to the second value by uniformly decreasing the line width of the first absorber pattern from both sides, wherein in the step (d), the first exposure light is irradiated with an exposure condition in which an exposure amount is decreased from the exposure amount when the line width of the first absorber pattern is not corrected to the second value, and the first exposure light is extreme ultraviolet light.